Semi-empirical material removal rate distribution model for SiO2 chemical mechanical polishing (CMP) processes

Precision Engineering

Volumn 37, Issue 2, 2013, Pages 483-490

  Lee, H S ^a   Jeong, H D ^a   Dornfeld, D A ^b  

^a Pusan National University   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Chemical mechanical polishing (CMP); Material removal rate (MRR); Modeling; MRR distribution

Indexed keywords

CHEMICAL MECHANICAL POLISHING(CMP); CHEMICAL-MECHANICAL POLISHING PROCESS; CMP PROCESS; CMP SLURRY; ELASTIC CONTACT; MATERIAL PROPERTY; MATERIAL REMOVAL RATE; MRR DISTRIBUTION; NORMAL CONTACT STRESS; PAD-PARTICLE INTERFACES; PLASTIC CONTACT; POLISHING PADS; RANDOMLY DISTRIBUTED; SEMI-EMPIRICAL; SEMIEMPIRICAL MODELS; SLURRY FLOW RATES;

INTERFACES (MATERIALS); MODELS; PARTICLE SIZE ANALYSIS; SILICA; STRESS CONCENTRATION; SURFACE ROUGHNESS;

CHEMICAL MECHANICAL POLISHING;

EID: 84873704827     PISSN: 01416359     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.precisioneng.2012.12.006     Document Type: Article

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