Fumed silica slurry stabilizing methods for chemical mechanical polishing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 2 A, 2003, Pages 418-423

  Haba, Shinichi ^a   Fukuda, Keiji ^b   Ohta, Yoshiharu ^b   Koubuchi, Yasushi ^b   Katouda, Takashi ^a  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b Rodel Nina Company   (Japan)

Author keywords

Centrifuge; CMP; Defect; Filtration; Fumed silica slurry; Large particles; Removal rate; Separation; Settlement; Surface roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; DEFECTS; FILTRATION; PARTICLES (PARTICULATE MATTER); POLISHING; REMOVAL; SCANNING ELECTRON MICROSCOPY; SEDIMENTATION; SEPARATION; SILICON WAFERS; SURFACE ROUGHNESS;

ENVIRONMENT SCANNING ELECTRON MICROSCOPY; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FUMED SILICA SLURRY; PLASMA-TETRA-ETHOXY-SILANE OXIDE WAFER; SCRATCH DEFECTS; SETTLEMENT SEPARATION METHOD;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0038005563     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.418     Document Type: Article

References (10)

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