Size effect of nanoparticles in chemical mechanical polishing - A transient model

IEEE Transactions on Semiconductor Manufacturing

Volumn 18, Issue 4, 2005, Pages 655-663

  Zeng, Taofang ^a   Sun, Thomas ^b  

^a North Carolina State University   (United States)

^b Cherrica Microelectronics Company   (China)

Author keywords

Chemical mechanical polishing (CMP); Material removal mechanism; Model; Workpiece roughness

Indexed keywords

ABRASIVES; CHEMICAL MECHANICAL POLISHING; PARTICLE SIZE ANALYSIS; SURFACE ROUGHNESS;

MATERIAL REMOVAL MECHANISM; MODEL; WORKPIECE ROUGHNESS;

NANOSTRUCTURED MATERIALS;

EID: 28644441611     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2005.858508     Document Type: Conference Paper

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