A wafer-scale material removal rate profile model for copper chemical mechanical planarization

International Journal of Machine Tools and Manufacture

Volumn 51, Issue 5, 2011, Pages 395-403

  Lee, Hyunseop ^a   Jeong, Haedo ^a  

^a Pusan National University   (South Korea)

Author keywords

Chemical mechanical planarization (CMP); Copper; Material removal rate profile; Modeling

Indexed keywords

CHEMICAL MECHANICAL POLISHING MODELS; CHEMICAL-MECHANICAL PLANARIZATION; CONTACT STRESS DISTRIBUTIONS; COPPER CHEMICAL MECHANICAL PLANARIZATION; COPPER CMP; EXPERIMENTAL ANALYSIS; MATERIAL REMOVAL RATE; MATERIAL REMOVAL RATE PROFILE; MATERIAL REMOVAL RATE PROFILES; MODELING; PRESTON EQUATIONS; PROCESS OPTIMIZATION; RELATIVE VELOCITY; SEMI-EMPIRICAL; SPATIAL PARAMETERS; WAFER-SCALE;

CHEMICAL POLISHING; COPPER; EQUATIONS OF STATE; NORMAL DISTRIBUTION; OPTIMIZATION; REACTION RATES; STRESS CONCENTRATION; STRIPPING (REMOVAL); VELOCITY DISTRIBUTION;

CHEMICAL MECHANICAL POLISHING;

EID: 79952442632     PISSN: 08906955     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijmachtools.2011.01.007     Document Type: Article

References (30)

1. P.B. Zantye, A. Kumar, and A.K. Sikder Chemical mechanical planarization for microelectronics applications Mater. Sci. Eng. R 45 2004 89 220
2. H. Lee, S. Joo, H. Kim, and H. Jeong Chemical mechanical planarization method for thick copper films of micro-electro-mechanical systems and integrated circuits Jpn. J. Appl. Phys. 47 2008 5708 5711
3. P. Wrschka, J. Hernandez, G.S. Oehrlein, and J. King Chemical mechanical planarization of copper damascene structures J. Electrochem. Soc. 147 2000 706 712 (Pubitemid 30568437)
4. K.H. Allers, and G.R. Matusiewicz. C.L. Claeys, H. Iwai, G. Bronner, R. Fair, ULSI Process Integration: The Electrochemical Society Proceedings Series vol. PV 99-18 1999 Pennington NJ p. 367
5. V.R.K. Gorantla, K.A. Assiongbon, S.V. Babu, and D. Roy Citric acid as a complexing agent in chemical-mechanical planarization of copper: investigation of surface reactions using impedance spectroscopy J. Electrochem. Soc. 152 2005 G404 G410
6. T. Du, Y. Luo, and V. Desai The combinatorial effect of complexing agent and inhibitor on chemicalmechanical planarization of copper Microelectron. Eng. 71 2004 90 97
7. D.H. Eom, I.K. Kim, J.H. Han, and J.G. Park The effect of hydrogen peroxide in a citric acid based copper slurry on Cu polishing J. Electrochem. Soc. 154 2007 D38 D44
8. F. Preston The theory and design of plate glass polishing machines J. Soc. Glass Technol. 11 1927 214 256
9. D. Castillo-Mejia, and S. Beaudoin A locally relevant Prestonian model for wafer polishing J. Electrochem. Soc. 150 2003 G96 G102
10. J. Sorooshian, D. DeNardis, L. Charns, Z. Li, F. Shadman, D. Boning, D. Hetherington, and A. Philipossian Arrhenius characterization of ILD and copper CMP processes J. Electrochem. Soc. 151 2004 G85 G88
11. H. Liang, J. Michel Martin, and R. Lee Influence of oxides on friction during Cu CMP J. Electron. Mater. 30 2001 391 395 (Pubitemid 32450512)
12. H.J. Kim, H.Y. Kim, H.D. Jeong, E.S. Lee, and Y.J. Shin Friction and thermal phenomena in chemical mechanical polishing J. Mater. Proc. Technol. 130-131 2002 334 338 (Pubitemid 35458852)
13. F. Sugimoto, Y. Arimoto, and T. Ito Simultaneous temperature measurement of wafers in chemical mechanical polishing of silicon dioxide layer Jpn. J. Appl. Phys. 34 1995 6314 6320
14. V.R. Kakireddy, S. Mudhivarthi, and A. Kumar Effect of temperature on copper damascene chemical mechanical polishing process J. Vac. Sci. Technol. B 26 2008 141 150 (Pubitemid 351198932)
15. Y.A. Sampurno, L. Borucki, Y. Zhuang, D. Boning, and A. Philipossian A method for direct measurement of substrate temperature during copper CMP J. Electrochem. Soc. 152 2005 G537 G541
16. D. Wang, J. Lee, K. Holland, T. Bibby, S. Beaudoin, and T. Cale Von Mises stress in chemicalmechanical polishing processes J. Electrochem. Soc. 144 1997 1121 1127 (Pubitemid 127651042)
17. K.S. Chen, H.M. Yeh, J.L. Yan, and Y.T. Chen Finite-element analysis on wafer-level CMP contact stress: reinvestigated issues and the effects of selected process parameters Int. J. Adv. Manuf. Technol. 42 2008 1118 1130
18. C. Srinivasa-Murthy, D. Wang, S.P. Beaudoin, T. Bibby, K. Holland, and T.S. Cale Stress distribution in chemical mechanical polishing Thin Solid Films 308-309 1997 533 537 (Pubitemid 127432316)
19. Y.Y. Lin, and S.P. Lo A study on the stress and nonuniformity of the wafer surface for the chemicalmechanical polishing process Int. J. Adv. Manuf. Technol. 22 2003 401 409
20. Y.Y. Lin, and S.P. Lo A study of a finite element model for the chemical mechanical polishing process Int. J. Adv. Manuf. Technol. 23 2004 644 650
21. S.P. Lo, and Y.Y. Lin The prediction of wafer surface non-uniformity using FEM and ANFIS in the chemical mechanical polishing process J. Mater. Proc.Technol. 168 2005 250 257
22. S.P. Lo, Y.Y. Lin, and J.C. Huang Analysis of retaining ring using finite element simulation in chemical mechanical polishing process Int. J. Adv. Manuf. Technol. 34 2007 547 555
23. H. Hocheng, H.Y. Tsai, and M.S. Tsai Effects of kinematic variables on uniformity in chemical mechanical planarization Int. J. Mach. Tool. Manufact. 40 2000 1651 1669
24. D. Kwon, H. Kim, and H. Jeong Heat and its effects to chemical mechanical polishing J. Mater. Proc. Technol 178 2006 82 87 (Pubitemid 44163115)
25. H. Lee, B. Park, and H. Jeong Mechanical effect of process condition and abrasive concentration on material removal rate profile in copper chemical mechanical planarization J. Mater. Proc. Technol. 209 2009 1729 1735
26. S. Deshpande, S.C. Kuiry, M. Klimov, and S. Seal Elucidating Cu-glycine and BTA complexations in Cu-CMP using SIMS and XPS Electrochem. Solid-State Lett. 8 2005 G98 G101
27. Y.C. Kao, C.C. Yu, and S.H. Shen Robust operation of copper chemical mechanical polishing Microelectron. Eng. 65 2003 61 75
28. D. DeNardis, D. Rosales-Yeomans, L. Borucki, and A. Philipossian Characterization of copperhydrogen peroxide film growth kinetics Thin Solid Films 513 2006 311 318 (Pubitemid 43928091)
29. S. Kondo, N. Sakuma, Y. Homma, Y. Goto, N. Ohashi, H. Yamaguchi, and N. Owads Abrasive-free polishing for copper damascene interconnection J. Electrochem. Soc. 147 2000 3907 3913 (Pubitemid 32027407)
30. D. DeNardis, D. Rosales-Yeomans, L. Borucki, and A. Philipossian Studying the effect of temperature on the copper oxidation process using hydrogen peroxide for use in multi-step chemical mechanical planarization models Thin Solid Films 518 2010 3903 3909