Mechanical effect of colloidal silica in copper chemical mechanical planarization

Journal of Materials Processing Technology

Volumn 209, Issue 20, 2009, Pages 6134-6139

  Lee, Hyunseop ^a   Joo, Sukbae ^a   Jeong, Haedo ^a  

^a Pusan National University   (South Korea)

Author keywords

Abrasive concentration; Chemical mechanical planarization (CMP); Colloidal silica; Friction energy; Friction force

Indexed keywords

ABRASIVE CONCENTRATION; CHEMICAL-MECHANICAL PLANARIZATION; COLLOIDAL SILICA; FRICTION ENERGY; FRICTION FORCE;

ABRASIVES; CHEMICAL MECHANICAL POLISHING; CONCENTRATION (PROCESS); COPPER; FRICTION; GRINDING (MACHINING); NANOTECHNOLOGY; POLISHING; SILICA; SLURRIES; TRIBOLOGY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 71749090390     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmatprotec.2009.05.027     Document Type: Article

References (18)

1. Busnaina A.A., Lin H., Moumen N., Feng J.W., and Taylor J. Particle adhesion and removal mechanisms in post-cmp cleaning processes. IEEE Trans. Semiconduct. Manuf. 15 (2002) 374-382
2. Chen K.W., Wang Y.L., Liu C.P., Chang L., and Li F.Y. Novel slurry solution for dishing elimination in copper process beyond 0.1-um technology. Thin Solid Films 498 (2006) 50-55
3. Chen P.L., Chen J.H., Tsai M.S., Dai B.T., and Yeh C.F. Post-Cu CMP cleaning for colloidal silica abrasive removal. Microelectron. Eng. 75 (2004) 352-360
4. Cho K., Kishimoto J., Hashizume T., Pickering H.W., and Sakurai T. Adsorption and film growth of BTA on clean and oxygen adsorbed Cu(1 1 0) surfaces. Appl. Surf. 87-88 (1995) 380-385
5. Cooper K., Cooper J., Groschopf J., Flake J., Solomentsev Y., and Farkas J. Effects of particle concentration on chemical mechanical planarization. Electrochem. Solid-State Lett. 5 12 (2002) G109-G112
6. Eom D.H., Kim I.K., Han J.H., and Park J.G. The effect of hydrogen peroxide in a citric acid based copper slurry on Cu polishing. J. Electrochem. Soc. 154 1 (2007) D38-D44
7. Gopal T., and Talbot J.B. Use of slurry colloidal behavior in modeling of material removal rates for copper CMP. J. Electrochem. Soc. 154 6 (2007) H507-H511
8. Gorantla V.R.K., Assiongbon K.A., Babu S.V., and Roy D. Citric acid as a complexing agent in CMP of copper. J. Electrochem. Soc. 152 5 (2005) G404-G410
9. Lee H.S., Park B.Y., and ad Jeong H.D. Influence of slurry components on uniformity in copper chemical mechanical planarization. Microelectron. Eng. 85 (2008) 689-696
10. Lee H.S., Park B.Y., Park S.M., Kim H.J., and Jeong H.D. The characteristics of frictional behavior in CMP using an integrated monitoring system. Key Eng. Mater. 339 (2007) 152-157
11. Liang H., Martin J.M., and Lee R. Influence of oxides on friction during Cu CMP. J. Electron. Mater. 30 4 (2001) 391-395
12. Matijevic E., and Babu S.V. Colloid aspects of chemical-mechanical planarization. J. Colloid Interface Sci. 320 (2008) 219-237
13. Mazaheri A.R., and Ahmadi G.A. Model for effect of colloidal forces on chemical mechanical polishing. J. Electrochem. Soc. 150 4 (2003) G233-G239
14. Nennemann A., Voetz M., Hey G., Puppe L., and Kirchmeyer S. Colloidchemical interactions of silica particles in the Cu-CMP-process. Progr. Colloid. Polym. Sci. 133 (2006) 159-168
15. Seal S., Kuiry S.C., and Heinmen B. Effect of glycine and hydrogen peroxide on chemical mechanical planarization of copper. Thin Solid Film 423 (2003) 243-251
16. Tamboli D., Banerjee G., and Waddell M. Novel interpretations of CMP removal rate dependencies on slurry particle size and concentration. Electrochem. Solid-State Lett. 7 10 (2004) F62-F65
17. Wang M.T., Tsai M.S., Liu C., Tseng W.T., Chang T.C., Chen J., and Chen M.C. Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing. Thin Solid Films 308-309 (1997) 518-522
18. Xu G., Liang H., Zhao J., and Li Y. Investigation of copper removal mechanisms during CMP. J. Electrochem. Soc. 151 10 (2004) G688-G692