The limits of post oxidation annealing in NO

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 693-696

  Rozen, John ^d   Zhu, Xingguang ^b,c   Ahyi, A C ^b   Williams, J R ^b   Feldman, L C ^a,c  

^a VANDERBILT UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c RUTGERS UNIVERSITY   (United States)

^d CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

Charge trapping; Interface states; Mobility; NO annealing; Oxidation; Reliability

Indexed keywords

ANNEALING; CARRIER MOBILITY; CHARGE TRAPPING; NITROGEN; OXIDATION; RELIABILITY; SILICA; SILICON CARBIDE; SILICON OXIDES;

INTERFACE QUALITY; INTERFACE STATE DENSITY; NITROGEN CONTENT; NITROGEN DENSITY; NO ANNEALING; OXIDATION RATES; POST-OXIDATION ANNEALING; SIO2/SIC INTERFACE;

INTERFACE STATES;

EID: 77954144148     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.693     Document Type: Conference Paper

References (17)

1. H. Li, S. Dimitrijev, H. B. Harrison, and D. Sweatman, Appl. Phys. Lett. Vol. 70 (1997), p. 2028 doi:10.1063/1.118773.
2. G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, M. D. Ventra, S. T. Pantelides, L. C. Feldman, and R. A. Weller, Appl. Phys. Lett. Vol. 76 (2000), p. 1713 doi:10.1063/1.126167.
3. J. Rozen, S. Dhar, M. E. Zvanut, J. R. Williams, and L. C. Feldman, J. Appl. Phys. 105 (2009), 124506 doi:10.1063/1.3131845.
4. J. Rozen, S. Dhar, S. T. Pantelides, L. C. Feldman, S. Wang, J. R. Williams, and V. V. Afanas'ev, Appl. Phys. Lett. Vol. 91 (2007), 153503 doi:10.1063/1.2790374. (Pubitemid 47569959)
5. J. Rozen, S. Dhar, S. K. Dixit, V. V. Afanas'ev, F. O. Roberts, H. L. Dang, S. Wang, S. T. Pantelides, J. R. Williams, and L. C. Feldman, J. Appl. Phys. Vol. 103 (2008), 124513 doi:10.1063/1.2940736.
6. S. S. Tan, T. P. Chen, C. H. Ang, and L. Chan, Microelectron. Reliab.Vol. 45 (2005), p. 19 doi:10.1016/j.microrel.2004.02.015.
7. J. Rozen, A. C. Ahyi, X. Zhu, J. R. Williams, and L. C. Feldman, submitted to IEEE Electron. Dev. Lett.
8. E. Arnold and D. Alok, IEEE Trans. Electron Dev. Vol. 48 (2001), p. 1870 doi:10.1109/16.944171. (Pubitemid 32926692)
9. V. Tilak, K. Matocha, and G. Dunne, IEEE Trans. Electron Dev. Vol. 54 (2007), p. 2823 doi:10.1109/TED.2007.906929. (Pubitemid 350129800)
10. A. Poggi, F. Moscatelli, S. Solmi, and R. Nipoti, IEEE Trans. Electron Dev. Vol. 55 (2008), p. 2021 doi:10.1109/TED.2008.926640.
11. T. L. Biggerstaff, C. L. Reynolds Jr., T. Zheleva, A. Lelis, D. Habersat, S. Haney, S.-H. Ryu, A. Agarwal, and G. Duscher, Appl. Phys. Lett. Vol. 95 (2009), p. 032108 doi:10.1063/1.3144272.
12. E. A. Ray, J. Rozen, S. Dhar, J. R. Williams, and L. C. Feldman, J. Appl. Phys. 103 (2008), 023522 doi:10.1063/1.2832408. (Pubitemid 351190697)
13. T. Hori, IEEE Trans. Electron Dev. Vol. 37 (1990), p. 2058 doi:10.1109/16.57169. (Pubitemid 20739016)
14. T. Shirasawa et al., Phys. Rev. B Vol. 79 (2009), 241301(R) doi:10.1103/PhysRevB.79.241301.
15. H. Yano, Y. Furumoto, T. Niwa, T. Hatayama, Y. Uraoka, and T. Fukui, Mater. Sci. Forum Vol. 457 (2004), p.1333 doi:10.4028/www.scientific.net/MSF. 457-460.1333.
16. X. Zhu, Ph.D. thesis, Auburn University, 2008.
17. K. McDonald, M. B. Huang, R. A. Weller, L. C. Feldman, J. R. Williams, F. C. Stedile, I. J. R. Baumvol, and C. Radtke, Appl. Phys. Lett. Vol. 76 (2000), p. 568 doi:10.1063/1.125819.