Structure and stoichiometry of (0001) 4H-SiC/oxide interface

Applied Physics Letters

Volumn 97, Issue 7, 2010, Pages

  Zhu, Xingguang ^a,b   Lee, Hang Dong ^a   Feng, Tian ^a   Ahyi, Ayayi C ^c   Mastrogiovanni, Daniel ^a   Wan, Alan ^a   Garfunkel, Eric ^a,b   Williams, John R ^c   Gustafsson, Torgny ^a   Feldman, Leonard C ^a,b,d  

^a RUTGERS UNIVERSITY   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c AUBURN UNIVERSITY   (United States)

^d VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MEDIUM ENERGY ION SCATTERING; NONSTOICHIOMETRIC; OXIDE SURFACE; SIC DEVICES; TRANSITION REGIONS;

MONOLAYERS; SILICON CARBIDE;

STOICHIOMETRY;

EID: 77956016498     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3481672     Document Type: Article

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