Oxygen stability, diffusion, and precipitation in SiC: Implications for thin-film oxidation

Journal of Electronic Materials

Volumn 29, Issue 3, 2000, Pages 353-358

  Di Ventra, Massimiliano ^a   Pantelides, Sokrates T ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; GROWTH (MATERIALS); OXIDATION; PRECIPITATION (CHEMICAL); SUBSTRATES;

OXYGEN STABILITY; THERMAL DONOR; THIN FILM OXIDATION;

SILICON CARBIDE;

EID: 0033891720     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0076-6     Document Type: Article

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