Normally-off gate-recessed AlGaN/GaN-on-Si hybrid MOS-HFET with Al 2O3 gate dielectric

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2011, Pages 213-214

  Corrion, A L ^a   Chen, M ^a   Chu, R ^a   Burnham, S D ^a   Khalil, S ^a   Zehnder, D ^a   Hughes, B ^a   Boutros, K ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH BREAKDOWN FIELDS; HIGH BREAKDOWN VOLTAGE; HIGH CURRENT DENSITIES; HIGH-K GATE DIELECTRICS; METAL OXIDE SEMICONDUCTOR; METAL-INSULATOR-SEMICONDUCTORS; POWER SWITCHING APPLICATIONS; SPECIFIC-ON-RESISTANCE;

ALUMINUM; ATOMIC LAYER DEPOSITION; DEPOSITION; ELECTRIC INSULATORS; GALLIUM NITRIDE; GATE DIELECTRICS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTERFACES (MATERIALS); MOS DEVICES; OPTIMIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR SWITCHES; SILICON; SILICON NITRIDE;

SEMICONDUCTING SILICON;

EID: 84880717607     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2011.5994503     Document Type: Conference Paper

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