High microwave-noise performance of AlGaN/GaN MISHEMTs on silicon with Al2O3 Gate Insulator Grown by ALD

IEEE Electron Device Letters

Volumn 31, Issue 2, 2010, Pages 96-98

  Liu, Zhi Hong ^a   Ng, Geok Ing ^a   Arulkumaran, Subramaniam ^a   Maung, Ye Kyaw Thu ^a   Teo, Khoon Leng ^a   Foo, Siew Chuen ^a   Sahmuganathan, Vicknesh ^a   Xu, Tao ^a   Lee, Chee How ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Al2O3; Atomic layer deposited (ALD); GaN; High electron mobility transistor (HEMT); Noise

Indexed keywords

ALGAN/GAN; ATOMIC LAYER DEPOSITED; GAIN CUTOFF FREQUENCY; GATE INSULATOR; GATE-LENGTH; HIGH CURRENTS; HIGH MICROWAVE; HIGH-RESISTIVITY SI SUBSTRATES; HIGH-RESISTIVITY SILICON SUBSTRATE; LOW-NOISE APPLICATIONS; MAXIMUM OSCILLATION FREQUENCY; METAL-INSULATOR-SEMICONDUCTORS; MIS-HEMT; NOISE PERFORMANCE; NOISE RESISTANCE; SMALL SIGNAL;

ALUMINUM; ATOMS; CUTOFF FREQUENCY; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROWAVES; SEMICONDUCTING SILICON;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 75749103268     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2036135     Document Type: Article

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