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Volumn 42, Issue 19, 2009, Pages
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Thermal and plasma damage in AlGaN Schottky diodes
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Author keywords
[No Author keywords available]
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Indexed keywords
AL CONTENT;
ALGAN;
ANNEALING TEMPERATURES;
AR PLASMA TREATMENT;
DEEP LEVEL;
ELECTRICAL CHARACTERISTIC;
ENERGY LEVEL;
HIGHER TEMPERATURES;
METALLIZATIONS;
MOLE FRACTION;
N VACANCY;
NEAR-SURFACE;
PLASMA DAMAGE;
PLASMA TREATMENT;
RECTIFYING CHARACTERISTICS;
SCHOTTKY CONTACTS;
SCHOTTKY DIODES;
THERMAL DAMAGE;
THERMAL-ANNEALING;
ALUMINUM;
ANNEALING;
DIODES;
DISTILLATION;
LIGHT EMITTING DIODES;
PLASMA APPLICATIONS;
PLASMAS;
SCHOTTKY BARRIER DIODES;
PLASMA DIODES;
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EID: 70350651138
PISSN: 00223727
EISSN: 13616463
Source Type: Journal
DOI: 10.1088/0022-3727/42/19/195105 Document Type: Article |
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Times cited : (7)
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References (13)
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