Suppression of gate leakage and enhancement of breakdown voltage using thermally oxidized al layer as gate dielectric for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

  Freedsman, Joseph J ^a   Kubo, Toshiharu ^a   Selvaraj, S Lawrence ^a   Egawa, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; BREAKDOWN VOLTAGE; DIELECTRIC LAYER; FIGURE OF MERIT; FREQUENCY-DEPENDENT CONDUCTANCE; GATE LEAKAGES; METAL-OXIDE-SEMICONDUCTOR HIGH-ELECTRON-MOBILITY TRANSISTORS; ORDERS OF MAGNITUDE; OXIDE LAYER; PINCHOFF; SCHOTTKY GATE; SYNTHETIC ROUTES; THERMALLY OXIDIZED; TRANSIENT TIME; TRAP DENSITY;

DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79955422136     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.04DF03     Document Type: Article

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