High voltage normally-off GaN MOSC-HEMTs on silicon substrates for power switching applications

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2012, Pages 45-48

  Li, Zhongda ^a   Waldron, John ^a   Dayal, Rohan ^a   Parsa, Leila ^a   Hella, Mona ^a   Chow, T Paul ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Enhancement mode; Gallium Nitride; High breakdown voltage; MOSC HEMTs; Power switching

Indexed keywords

BIDIRECTIONAL SWITCH; BUCK BOOST CONVERTER; ENHANCEMENT-MODE; GAN HEMTS; HIGH BREAKDOWN VOLTAGE; HIGH VOLTAGE; MOSC-HEMTS; POWER SWITCHING; POWER SWITCHING APPLICATIONS; SILICON SUBSTRATES; SPECIFIC-ON-RESISTANCE; SPICE SIMULATIONS; SWITCHING PERFORMANCE; SYSTEM EFFICIENCY;

HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTOR DEVICES;

GALLIUM NITRIDE;

EID: 84864773554     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2012.6229019     Document Type: Conference Paper

References (11)

1. T. P. Chow and Z. Li, "Recent Advances in High-Voltage GaN MOS-Gated Transistors for Power Electronics Applications," Springer Series in Materials Science, Vol. 156, pp. 239-250, 2012.
2. 2," Proc. Int. Symp. Power Semicond. Dev. ICs, pp. 295-298, 2008.
3. Z. Li, and T. P. Chow, "Drift Region Optimization in High-Voltage GaN MOS-gated HEMTs," Phys. Status Solidi (c), vol. 8, No. 7-8, pp. 2436-2438, 2011.
4. Z. Li, T. P. Chow, "Channel Scaling of Hybrid GaN MOS-HEMTs," Solid State Electronic, vol. 56, pp. 111-115, 2011.
5. Y. Cai, Y. Zhou, K. M. Lau, and K. J. Chen, "Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode," IEEE Trans. Electron Devices, vol. 53, no. 9, pp. 2207-2215, 2006.
6. H. Kambayashi, Y. Satoh, S. Ootomo, T. Kokawa, T. Nomura, S. Sato, and T. P. Chow, "Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage," Solid State Electron., vol. 54, pp. 660-664, 2010.
7. B. Lu, O. I. Saadat, and T. Palacios, " High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor," IEEE Electron Device Lett., vol. 31, no. 9, pp. 990-992, 2010.
8. B. Lu, and T., Palacios, "High Breakdown (> 1500 V) AlGaN/GaN HEMTs by Substrate-Transfer Technology," IEEE Electron Device Lett., vol. 31, no. 9, pp. 951-953, 2010.
9. P. Srivastava, J. Das, D. Visalli, M. Van Hove, P. E. Malinowski, D. Marcon, S. Lenci, K. Geens, K. Cheng, M. Leys, S. Decoutere, R. P. Mertens, and G. Borghs, "Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-μm Buffer Thickness by Local Substrate Removal," IEEE Electron Device Lett., vol. 32, no. 1, pp. 30-32, 2011.
10. Z. Li, T. Marron, H. Naik, W. Huang, and T. P. Chow, "Experimental Study on Current Collapse of GaN MOSFETs, HEMTs and MOSHEMTs," Proc. Int. Symp. Power Semicond. Dev. ICs, pp. 225-228, 2010.
11. N. Ikeda , Y. Niiyama , H. Kambayashi , Y. Sato , T. Nomura , S. Kato and S. Yoshida "GaN power transistors on Si substrates for switching applications," Proc. IEEE, vol. 98, no. 7, pp.1151-1161 , 2010.