High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique

Solid-State Electronics

Volumn 56, Issue 1, 2011, Pages 163-167

  Kambayashi, Hiroshi ^a   Satoh, Yoshihiro ^a   Kokawa, Takuya ^a   Ikeda, Nariaki ^a   Nomura, Takehiko ^a   Kato, Sadahiro ^a  

^a Advanced Power Device Research Association   (Japan)

Author keywords

Gallium nitride; Heterojunction field effect transistor (HFET); MOS; Normally off; Selective area growth (SAG) technique

Indexed keywords

ALGAN/GAN; BREAKDOWN VOLTAGE; CHANNEL REGION; CHANNEL RESISTANCE; FIELD-EFFECT MOBILITIES; HIGH FIELD; METAL OXIDE SEMICONDUCTOR; MOS; MOSHFET; N-CHANNEL; NORMALLY-OFF; ON-STATE RESISTANCE; SELECTIVE AREA GROWTH TECHNIQUES; SI SUBSTRATES;

FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTOR GROWTH;

SEMICONDUCTING SILICON;

EID: 78751642971     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.10.001     Document Type: Article

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