Strain assisted inter-diffusion in GaN/AlN quantum dots

Journal of Applied Physics

Volumn 113, Issue 3, 2013, Pages

  Leclere, C ^a   Fellmann, V ^b   Bougerol, C ^b   Cooper, D ^b   Gayral, B ^b   Proietti, M G ^c   Renevier, H ^a   Daudin, B ^b  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b CEA GRENOBLE   (France)

^c UNIVERSITY OF ZARAGOZA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALN BARRIERS; ANOMALOUS DIFFRACTION; BLUE SHIFT; DIFFRACTION ANOMALOUS FINE STRUCTURES; DIFFRACTION DATA; EMISSION WAVELENGTH; GAN QUANTUM DOTS; GAN/ALN QUANTUM DOTS; MULTIWAVELENGTH; PHOTOLUMINESCENCE PEAK; QUANTITATIVE DETERMINATIONS; RECIPROCAL SPACE MAPPING; SIMULTANEOUS USE; STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURAL INFORMATION; X-RAY TECHNIQUES;

DIFFRACTION; DIGITAL STORAGE; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84872869432     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4775587     Document Type: Article

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