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Journal of Crystal Growth

Volumn 334, Issue 1, 2011, Pages 40-45

Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy

(5) Kadir, Abdul a Meissner, Christian a Schwaner, Tilman a Pristovsek, Markus a Kneissl, Michael a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

A1. Atomic force microscopy; A1. High resolution X ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

A-DENSITY; A1. HIGH RESOLUTION X-RAY DIFFRACTION; AVERAGE DIAMETER; AVERAGE HEIGHT; CRITICAL THICKNESS; GREEN EMISSIONS; GROWTH MECHANISMS; HIGH RESOLUTION X RAY DIFFRACTION; HORIZONTAL REACTORS; INDIUM CONTENT; INGAN QUANTUM DOTS; LAYER THICKNESS; METAL-ORGANIC VAPOR PHASE EPITAXY; RECIPROCAL SPACE MAPS; STRANSKI-KRASTANOV GROWTH MODE; TEMPERATURE RANGE;

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH TEMPERATURE; METALLORGANIC VAPOR PHASE EPITAXY; VAPORS; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 80053318971 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.08.003 Document Type: Article

Times cited : (15)

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