Post-growth engineering of InAs/GaAs quantum dots' band-gap using proton implantation and annealing

Nanotechnology

Volumn 17, Issue 15, 2006, Pages 3707-3709

  Ilahi, B ^a   Salem, B ^b,c   Aimez, V ^b   Sfaxi, L ^a   Maaref, H ^a   Morris, D ^b  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b UNIVERSITÉ DE SHERBROOKE   (Canada)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH KINETICS; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

BAND GAPS; FULL WIDTH AT HALF MAXIMUM (FWHM); PROTON IMPLANTATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748897002     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/15/015     Document Type: Article

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