The effect of spacer layer thickness on vertical alignment of InGaAs/GaNAs quantum dots grown on GaAs(3 1 1)B substrate

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 10, 2010, Pages 2768-2771

  Shoji, Yasushi ^a,c   Oshima, Ryuji ^a,b   Takata, Ayami ^a,b   Okada, Yoshitaka ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Molecular beam epitaxy; Quantum dots; Strain compensation

Indexed keywords

ATOMIC HYDROGEN; GAAS; GROWTH TECHNIQUES; HIGH QUALITY; INCLINATION ANGLES; INGAAS QUANTUM DOTS; LOCAL STRAIN FIELD; NUCLEATION SITES; QD ARRAYS; QUANTUM DOT; SELF-ORGANIZED; SIZE UNIFORMITY; SPACER LAYER THICKNESS; STRAIN FIELDS; VERTICAL ALIGNMENT; VERTICALLY ALIGNED;

ALIGNMENT; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77958000082     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.11.095     Document Type: Conference Paper

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