Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm

Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

  Liu, H F ^a   Liu, W ^a   Yong, A M ^a   Zhang, X H ^a   Chua, S J ^a   Chi, D Z ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BASE LAYERS; C-PLANE SAPPHIRE SUBSTRATES; CONTINUOUS WAVES; ELEVATED TEMPERATURE; EMISSION WAVELENGTH; HIGH-RESOLUTION X-RAY DIFFRACTION; HRXRD; INGAN/GAN; PL EMISSION; PL LIFETIME; RECIPROCAL SPACE MAPPING; RECOMBINATION CENTERS; STRUCTURAL AND OPTICAL PROPERTIES; TIME-RESOLVED PHOTOLUMINESCENCE; TRANSITION BEHAVIOR;

ANNEALING; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL EMISSION SPECTROSCOPY; OPTICAL PROPERTIES; ORGANIC CHEMICALS; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR QUANTUM DOTS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 80053541325     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3638703     Document Type: Article

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