Effect of annealing on AlN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structures

Surface and Interface Analysis

Volumn 42, Issue 10-11, 2010, Pages 1552-1555

  Magalhaes S ^a,b   Lorenz, K ^a,c   Franco, N ^a,c   Barradas, N P ^a,c   Alves, E ^a,c   Monteiro, T ^b   Amstatt, B ^d   Fellmann, V ^d   Daudin, B ^d  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^d CEA GRENOBLE   (France)

Author keywords

Annealing; Heterostructures; Nitrides; Quantum dots; Rutherford backscattering spectrometry; X ray reflection

Indexed keywords

ALN; HETEROSTRUCTURES; INTER-DIFFUSION; ION BEAM CHARACTERIZATION; LOW-DIMENSIONAL STRUCTURES; MULTILAYER STRUCTURES; NITROGEN ATMOSPHERES; QUANTUM DOT; QUANTUM DOTS; RUTHERFORD BACK-SCATTERING; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SPACER LAYER; THERMAL-ANNEALING; THICKNESS FLUCTUATIONS; X RAY REFLECTION; X-RAY STUDIES;

ANNEALING; ATMOSPHERIC TEMPERATURE; BACKSCATTERING; CRYSTALS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MULTILAYERS; OPTICAL WAVEGUIDES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPECTROMETRY; X RAY DIFFRACTION; X RAYS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 78149434154     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3614     Document Type: Conference Paper

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