Nearly strain-free AlGaN on (0001) sapphire: X-ray measurements and a new crystallographic growth model

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 251-257

  Krost, A ^a   Blasing J ^a   Schulze, F ^a   Schon O ^b   Alam, A ^b   Heuken, M ^b  

^a Inst Experimentelle Physik O   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTALLOGRAPHY; INTERFACES (MATERIALS); LATTICE CONSTANTS; LIGHT REFLECTION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUBSTRATES;

COINCIDENCE SITE LATTICES; X RAY RECIPROCAL SPACE MAPPING;

HETEROJUNCTIONS;

EID: 0343774148     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00694-1     Document Type: Article

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