Crystal structure and epitaxial relationship of Ni4InGaAs 2 films formed on InGaAs by annealing

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 31, Issue 1, 2013, Pages

  Ivana, ^a   Foo, Yong Lim ^b   Zhang, Xingui ^a   Zhou, Qian ^a   Pan, Jisheng ^c   Kong, Eugene ^a   Owen, Man Hon Samuel ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b SINGAPORE INSTITUTE OF TECHNOLOGY   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; MOSFET DEVICES;

CONTACT METALLIZATION; ELECTRICAL RESISTIVITY; EPITAXIAL RELATIONSHIPS; HIGH MOBILITY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NI FILMS;

SEMICONDUCTING INDIUM;

EID: 84872728877     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4769266     Document Type: Article

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