Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As

Applied Physics Letters

Volumn 99, Issue 1, 2011, Pages

  Ivana, ^a   Pan, Jisheng ^b   Zhang, Zheng ^b   Zhang, Xingui ^a   Guo, Huaxin ^a   Gong, Xiao ^a   Yeo, Yee Chia ^a,c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; HOLE BARRIER; P-TYPE; SCHOTTKY CONTACTS;

ALIGNMENT; ELECTRON MOBILITY; ELECTRONS; GALLIUM; OHMIC CONTACTS; PHOTOELECTRICITY; PHOTONS; SEMICONDUCTING INDIUM; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; WORK FUNCTION;

PHOTOELECTRON SPECTROSCOPY;

EID: 79960496032     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3607959     Document Type: Article

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