SCOPUS 정보 검색 플랫폼

Volumn 4, Issue 2, 2011, Pages

Self-aligned metal source/drain InxGa1-xAs n-metal-oxide-semiconductor field-effect transistors using Ni-InGaAs alloy

(14) Kim, Sang Hyeon a Yokoyama, Masafumi a Taoka, Noriyuki a Iida, Ryo a Lee, Sunghoon a Nakane, Ryosho a Urabe, Yuji b Miyata, Noriyuki b Yasuda, Tetsuji b Yamada, Hisashi c Fukuhara, Noboru c Hata, Masahiko c Takenaka, Mitsuru a Takagi, Shinichi a

a UNIVERSITY OF TOKYO (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

c SUMITOMO CHEMICAL CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION PROCESS; INDIUM CONTENT; METAL SOURCE/DRAIN; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; P-N JUNCTION; PEAK MOBILITY; SALICIDES; SCHOTTKY-BARRIER-HEIGHT ENGINEERINGS; SELF-ALIGN; SELF-ALIGNED;

CERIUM ALLOYS; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; ION BEAMS; METALS; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM; SEMICONDUCTOR JUNCTIONS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 79951618530 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.4.024201 Document Type: Article

Times cited : (79)

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