Review of electrical characterization of ultra-shallow junctions with micro four-point probes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 28, Issue 1, 2010, Pages

  Petersen, Dirch H ^a,b   Hansen, Ole ^a,b   Hansen, Torben M ^b   Bøggild, Peter ^b   Lin, Rong ^a   Kjær, Daniel ^a   Nielsen, Peter F ^a   Clarysse, Trudo ^c   Vandervorst, Wilfried ^c,d   Rosseel, Erik ^c   Bennett, Nick S ^e   Cowern, Nick E B ^e  

^a Capres AS   (Denmark)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^c IMEC   (Belgium)

^d KU LEUVEN   (Belgium)

^e NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEAL PROCESS; CARRIER PROFILING; CHARACTERIZATION METHODS; CONVENTIONAL TECHNIQUES; ELECTRICAL CHARACTERIZATION; HALL EFFECT MEASUREMENT; HIGH PRECISION; MICRO-FOUR-POINT PROBES; ULTRA SHALLOW JUNCTION;

ELECTRIC RESISTANCE; HALL EFFECT; MAGNETIC FIELD EFFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS;

PROBES;

EID: 77949378535     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3224898     Document Type: Conference Paper

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