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Volumn 31, Issue 1, 2013, Pages

Probing the properties of atomic layer deposited ZrO2 films on p-Germanium substrates

Author keywords

[No Author keywords available]

Indexed keywords

AC IMPEDANCE SPECTROSCOPY; ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE; CAPACITIVE STRUCTURE; CONDUCTION MECHANISM; ELECTRICAL CHARACTERIZATION; FREQUENCY DISPERSION; GE SUBSTRATES; METAL OXIDE SEMICONDUCTOR; P-TYPE; TEMPERATURE RANGE; VALENCE-BAND ELECTRONIC STRUCTURE;

EID: 84871911896     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4768166     Document Type: Article
Times cited : (12)

References (35)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.