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Volumn 158, Issue 5, 2011, Pages

Deposition temperature and thermal annealing effects on the electrical characteristics of atomic layer deposited Al2O3 films on silicon

(4) Rafi J M a Zabala, M a Beldarrain, O a Campabadal, F a

a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE; DEPOSITED LAYER; DEPOSITION CONDITIONS; DEPOSITION TEMPERATURES; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; HIGHEST TEMPERATURE; INTERFACE STATE; NANOELECTRONIC APPLICATIONS; NEGATIVE CHARGE; POSITIVE CHARGES; POST DEPOSITION TREATMENT; SURFACE PASSIVATION; THERMAL ANNEALING EFFECTS; THERMAL TREATMENT; THERMAL-ANNEALING; UV-LIGHT IRRADIATION;

ALUMINUM; ATOMIC LAYER DEPOSITION; ELECTRIC PROPERTIES; HEAT TREATMENT; MERCURY (METAL); PASSIVATION;

DEPOSITION;

EID: 79953174952 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3559458 Document Type: Article

Times cited : (56)

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