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Volumn , Issue , 2003, Pages 473-476

Evaluation of ZrO2 gate dielectrics for advanced CMOS devices

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED CMOS DEVICE;

EID: 84907692038     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256916     Document Type: Conference Paper
Times cited : (5)

References (9)
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    • G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High-k Gale Dielectrics: Current Status and Materials Properties Considerations," J. AppLPhys., vol. 89, no. 10, pp. 5243-5275, 2001.
    • (2001) J. AppLPhys , vol.89 , Issue.10 , pp. 5243-5275
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  • 3
    • 0038613447 scopus 로고    scopus 로고
    • Compositional and electrical properties of zirconium dioxide thin films chemically deposited' on silicon
    • in print
    • S. Harasek, H. Wanzenbock, and E. Bertagnolli, "Compositional and Electrical Properties of Zirconium Dioxide Thin Films Chemically Deposited' on Silicon," J. Vac. Sci. Technol. A, in print, 2003.
    • (2003) J. Vac. Sci. Technol. A
    • Harasek, S.1    Wanzenbock, H.2    Bertagnolli, E.3
  • 4
    • 0034452583 scopus 로고    scopus 로고
    • Band diagram and carrier conduction mechanism in zroa/zr - Silicate / si mis structure fabricated by pulsed-laser-ablation deposition
    • T. Yamaguchi, H. Satake, N. Fukushima, and A. Tori-umi, "Band Diagram and Carrier Conduction Mechanism in ZrOa/Zr - silicate / Si MIS structure Fabricated by Pulsed-Laser-Ablation Deposition. " in Intl. Electron Devices Meeting, pp. 2. 1. 1-2. 1. 4,2000.
    • (2000) Intl. Electron Devices Meeting , pp. 211-214
    • Yamaguchi, T.1    Satake, H.2    Fukushima, N.3    Tori-Umi, A.4
  • 5
    • 0036866914 scopus 로고    scopus 로고
    • Voltage-and temperature-dependent gate capacitance and current model: Application to zr02 n-channel mos capacitor
    • Y. -Y. Fan, R. E. Nieh, J. C. Lee, G. Lucovsky, G. A. Brown, L. F. Register, and S. K. Banerjee. "Voltage-and Temperature-Dependent Gate Capacitance and Current Model: Application to Zr02 n-Channel MOS Capacitor," IEEE Trans. Etectwn Devices, vol. 49, no. If. pp. 1969-1978,2002.
    • (2002) IEEE Trans. Etectwn Devices , vol.49 , Issue.11 , pp. 1969-1978
    • Fan, Y.Y.1    Nieh, R.E.2    Lee, J.C.3    Lucovsky, G.4    Brown, G.A.5    Register, L.F.6    Banerjee, S.K.7
  • 6
    • 0029387240 scopus 로고
    • Technique for monitoring slow interface trap characteristics in mos capacitors
    • P. Tanner, S. Dimitrijev, and H. B. Harrison, 'Technique for Monitoring Slow Interface Trap Characteristics in MOS Capacitors," Elearon. Lett., vol. 31, no. 21, pp. 1880-1881, 1995.
    • (1995) Elearon. Lett , vol.31 , Issue.21 , pp. 1880-1881
    • Tanner, P.1    Dimitrijev, S.2    Harrison, H.B.3
  • 7
    • 0035477056 scopus 로고    scopus 로고
    • Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
    • F. Jimenez-Molinos, A. Palma, F. Gamiz, J. Banqueri, and J. A. Lopez-Vitlanueva, "Physical Model for Trap-Assisted Inelastic Tunneling in Metal-Oxide-Semiconductor Structures," J. Appl. Phys.. vol. 90, no. 7, pp. 3396-3404, 2001.
    • (2001) J. Appl. Phys. , vol.90 , Issue.7 , pp. 3396-3404
    • Jimenez-Molinos, F.1    Palma, A.2    Gamiz, F.3    Banqueri, J.4    Lopez-Vitlanueva, J.A.5
  • 8
    • 0039193265 scopus 로고    scopus 로고
    • Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures
    • A. Palma, A. Godoy, J. A. Jimenez-Tejada, J. E. Carceller. and I. A. Lopez-Villanueva, "Quantum Two-Dimensional Calculation of Time Constants of Random Telegraph Signals in Metal-Oxide-Semiconductor Structures," Physical Review B, vol. 56, no. 15, pp: 9565-9574, 1997.
    • (1997) Physical Review B , vol.56 , Issue.15 , pp. 9565-9574
    • Palma, A.1    Godoy, A.2    Jimenez-Tejada, J.A.3    Carceller, J.E.4    Lopez-Villanueva, I.A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.