Metal organic chemical vapor deposition of ZrO2 thin films using the single precursor zirconium 3-methyl-3-pentoxide, Zr(mp)4

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 4, 2006, Pages 1208-1212

  Cho, Wontae ^a   Jang, Hong Suk ^a   An, Ki Seok ^a   Lee, Young Kuk ^a   Chung, Taek Mo ^a   Kim, Chang Gyoun ^a   Kim, Yunsoo ^a   So, Byung Soo ^b   Hwang, Jin Ha ^b   Jung, Donggeun ^c  

^a Korea Research Institute of Chemical Technology   (South Korea)

^b Hong Ik University   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; ORGANOMETALLICS; REACTION KINETICS; THIN FILMS; ZIRCONIA;

CAPACITANCE VOLTAGE MEASUREMENTS; METAL ORGANIC CHEMICAL VAPOR DEPOSITION; SUBSTRATE TEMPERATURE;

METALLIC FILMS;

EID: 33745510303     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2172935     Document Type: Article

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