A comparative X-ray photoelectron spectroscopy and medium-energy ion-scattering study of ultra-thin, Hf-based high-k films

Surface and Interface Analysis

Volumn 42, Issue 6-7, 2010, Pages 1057-1060

  Sygellou, L ^a   Ladas, S ^a   Reading, M A ^b   Van Den Berg, J A ^b   Conard, T ^c   De Gendt, S ^c  

^a UNIVERSITY OF PATRAS   (Greece)

^b UNIVERSITY OF SALFORD   (United Kingdom)

^c IMEC   (Belgium)

Author keywords

Hafnium silicate; HfO2; High k nanofilms; Layerthickness measurement; MEIS; XPS

Indexed keywords

BAND GAPS; BEFORE AND AFTER; DECOUPLED PLASMA NITRIDATION; EFFECTIVE ATTENUATION LENGTH; ENERGY SPECTRA; EXPERIMENTAL UNCERTAINTY; FILM MATERIALS; HAFNIUM SILICATES; HFO2; INELASTIC MEAN FREE PATH; LAYER PARAMETERS; LAYER STRUCTURES; MEDIUM ENERGY ION SCATTERING; MULTILAYER STACKS; NANO FILMS; NANOMETER SIO; NITROGEN CONTENT; RELATIVE SENSITIVITY FACTOR; SI(1 0 0); SUBNANOMETER RESOLUTION; ULTRA-THIN; XPS;

DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; MULTILAYER FILMS; NITROGEN PLASMA; PLASMA APPLICATIONS; SILICATES; SPECTROSCOPY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77954256249     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3251     Document Type: Conference Paper

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