Band diagram and carrier conduction mechanisms in ZrO2 MIS structures

IEEE Transactions on Electron Devices

Volumn 51, Issue 5, 2004, Pages 774-779

  Yamaguchi, Takeshi ^a   Satake, Hideki ^a   Fukushima, Noburu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Band diagram; Carrier conduction; High gate dielectrics; Leakage currents; Silicate; ZrO2

Indexed keywords

BAND STRUCTURE; CARRIER MOBILITY; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MISFET DEVICES; PHOTOELECTRON SPECTROSCOPY; SILICATES; SILICON; X RAY SPECTROSCOPY; ZIRCONIA;

BAND DIAGRAM; CARRIER CONDUCTION; ELECTRON CONDUCTION; GATE DIELECTRICS; HOLE CONDUCTION;

MIS DEVICES;

EID: 2442493126     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.826973     Document Type: Article

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