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Applied Physics Letters

Volumn 99, Issue 2, 2011, Pages

Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation

(4) Fukuda, Yukio a Otani, Yohei a Toyota, Hiroshi b Ono, Toshiro b

a TOKYO UNIVERSITY OF SCIENCE (Japan)

b HIROSAKI UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE METHOD; GE SUBSTRATES; INTERFACE PROPERTY; INTERFACE TRAP DENSITY; METAL INSULATORS; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; PLASMA NITRIDATION; SCHOTTKY BARRIERS; SEMICONDUCTOR STRUCTURE; TRAP DENSITY;

CYCLOTRONS; ELECTRON CYCLOTRON RESONANCE; FABRICATION; GATE DIELECTRICS; GATES (TRANSISTOR); METAL INSULATOR BOUNDARIES; MIS DEVICES; RESONANCE; SEMICONDUCTING SILICON; SEMICONDUCTOR INSULATOR BOUNDARIES;

GERMANIUM;

EID: 79960548134 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3611581 Document Type: Article

Times cited : (8)

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