SiGe SEG growth for buried channel p-MOS devices

ECS Transactions

Volumn 25, Issue 7, 2009, Pages 201-210

  Hikavyy, A ^a   Loo, R ^a   Takeoka, L Witters S ^a,b   Geypen, J ^a   Brijs, B ^a   Merckling, C ^a   Caymax, M ^a   Dekoster, J ^a  

^a IMEC   (Belgium)

^b Panasonic   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; MOS DEVICES; SILICON;

BURIED CHANNELS; ELECTRICAL DATA; LOW DEPOSITION TEMPERATURE; LOW GROWTH TEMPERATURE; SELECTIVE EPITAXIAL GROWTH; SI CAPPING LAYER; SIGE CHANNELS; STRAINED SIGE;

SI-GE ALLOYS;

EID: 74349115688     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3203957     Document Type: Conference Paper

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