High-mobility 0.85nm-EOT Si0.45Ge0.55-pFETs: Delivering high performance at scaled VDD

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Mitard, J ^a   Witters, L ^a   Garcia Bardon, M ^a   Christie, P ^a   Franco, J ^a,b   Mercha, A ^a   Magnone, P ^a,c   Alioto, M ^a,f   Crupi, F ^a,c   Ragnarsson, L A ^a   Hikavyy, A ^a   Vincent, B ^a   Chiarella, T ^a   Loo, R ^a   Tseng, J ^a   Yamaguchi, S ^a,d   Takeoka, S ^a,e   Wang, W E ^a   Absil, P ^a   Hoffmann, T ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY OF CALABRIA   (Italy)

^d SONY CORPORATION   (Japan)

^e Panasonic ^*  (Japan)

^f UNIVERSITY OF SIENA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GATE FIRST; HIGH MOBILITY; IN-DEPTH ANALYSIS;

CIRCUIT SIMULATION; ELECTRON DEVICES; GERMANIUM;

SILICON;

EID: 79951821376     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703337     Document Type: Conference Paper

References (12)

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