Forming kinetics in HfO2-Based RRAM cells

IEEE Transactions on Electron Devices

Volumn 60, Issue 1, 2013, Pages 438-443

  Lorenzi, Paolo ^a,b   Rao, Rosario ^a,b   Irrera, Fernanda ^a,b  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b Italian University NanoElectronics Team   (Italy)

Author keywords

Area scaling; electrodes; forming kinetics; forming pulse amplitude; HfO2; MIM device; read disturb; resistive RAM (RRAM); temperature

Indexed keywords

AREA SCALING; HFO2; PULSE AMPLITUDE; READ DISTURB; RESISTIVE RAMS (RRAM);

ELECTRIC POTENTIAL; ELECTRODES; ELECTROFORMING; MIM DEVICES; PULSE AMPLITUDE MODULATION; TEMPERATURE; TRANSIENTS;

HAFNIUM OXIDES;

EID: 84871762848     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2227324     Document Type: Article

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