Modeling of the forming operation in HfO2-based resistive switching memories

2011 3rd IEEE International Memory Workshop, IMW 2011

Volumn , Issue , 2011, Pages

  Vandelli, Luca ^a   Padovani, Andrea ^a   Bersuker, Gennadi ^b   Gilmer, David ^b   Pavan, Paolo ^a   Larcher, Luca ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b SEMATECH   (United States)

Author keywords

forming; highk dielectric; modeling and simulations; resistive switching memories; RRAM; transition metal oxides

Indexed keywords

HIGH-K DIELECTRIC; MODELING AND SIMULATIONS; RESISTIVE SWITCHING MEMORIES; RRAM; TRANSITION METAL OXIDES;

COMPUTER SIMULATION; HAFNIUM OXIDES; MODELS; SWITCHING SYSTEMS; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

RANDOM ACCESS STORAGE;

EID: 79960002100     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2011.5873224     Document Type: Article

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