Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Gao, B ^a   Kang, J F ^a   Chen, Y S ^a   Zhang, F F ^a   Chen, B ^a   Huang, P ^a   Liu, L F ^a   Liu, X Y ^a   Wang, Y Y ^a   Tran, X A ^b   Wang, Z R ^b   Yu, H Y ^b   Chin, Albert ^c  

^a PEKING UNIVERSITY   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATIONS; DEVICE OPTIMIZATION; EXPERIMENTAL DATA; IN-LINE; MEMORY PERFORMANCE; OXYGEN IONS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING BEHAVIORS; SIMULATION METHODS; SWITCHING CHARACTERISTICS; TRANSITION-METAL OXIDES;

ELECTRON DEVICES; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

RANDOM ACCESS STORAGE;

EID: 84863068618     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131573     Document Type: Conference Paper

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