Understanding the role of the Ti metal electrode on the forming of HfO 2-based RRAMs

2012 4th IEEE International Memory Workshop, IMW 2012

Volumn , Issue , 2012, Pages

  Padovani, Andrea ^a   Larcher, Luca ^a   Padovani, Paolo ^a   Cagli, Carlo ^b   De Salvo, Barbara ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b CEA GRENOBLE   (France)

Author keywords

component; forming; forming voltage; HfO 2; resistive switching memories; RRAM modeling; Titanum electrode

Indexed keywords

COMPONENT; ELECTRICAL DATA; HFO 2; LOW-VOLTAGE; METAL ELECTRODES; PHYSICO-CHEMICAL ANALYSIS; PHYSICS-BASED; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; TI ELECTRODE;

FORMING; HAFNIUM OXIDES; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 84864137037     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2012.6213667     Document Type: Conference Paper

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