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Volumn 98, Issue 26, 2011, Pages

Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; ELECTROLYTIC REDUCTION; TRANSITION METALS;

EID: 79960099132     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3605591     Document Type: Article
Times cited : (62)

References (25)
  • 9
    • 33846423127 scopus 로고    scopus 로고
    • Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model
    • DOI 10.1063/1.2431792
    • Y. Sato, K. Kinoshita, M. Aoki, and Y. Sugiyama, Appl. Phys. Lett. 90, 033503 (2007). 10.1063/1.2431792 (Pubitemid 46146399)
    • (2007) Applied Physics Letters , vol.90 , Issue.3 , pp. 033503
    • Sato, Y.1    Kinoshita, K.2    Aoki, M.3    Sugiyama, Y.4
  • 17
    • 77953026233 scopus 로고    scopus 로고
    • 10.1109/LED.2010.2045471
    • D. Ielmini, Electron Devices Lett. 31, 552 (2010). 10.1109/LED.2010. 2045471
    • (2010) Electron Devices Lett. , vol.31 , pp. 552
    • Ielmini, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.