Oxide-based RRAM switching mechanism: A new ion-transport-recombination model

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Gao, B ^a   Yu, S ^a   Xu, N ^a   Liu, L F ^a   Sun, B ^a   Liu, X Y ^a   Han, R Q ^a   Kang, J F ^a   Yu, B ^b   Wang, Y Y ^a  

^a PEKING UNIVERSITY   (China)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; INTERSTITIAL OXYGENS; ION TRANSPORTS; METAL OXIDES; OXIDE MATRICES; OXYGEN IONS; PHYSICAL MODELS; RECOMBINATION MODELS; RESET CURRENTS; RESISTIVE RANDOM ACCESS MEMORIES; RESISTIVE SWITCHING; SWITCHING MECHANISMS; TRANSPORT EQUATIONS;

ELECTRON DEVICES; ION EXCHANGE MEMBRANES; IONS; OXYGEN; RANDOM ACCESS STORAGE;

OXYGEN VACANCIES;

EID: 64549136141     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796751     Document Type: Conference Paper

References (6)

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