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Volumn 110, Issue 7, 2011, Pages

Temperature and excitation intensity dependence of photoluminescence in AlGaN quantum wells with mixed two-dimensional and three-dimensional morphology

(7) Rajanna, G a,b Feng, W a,b Sohal, S a Kuryatkov, V V a,b Nikishin, S A a,b Bernussi, A A a,b Holtz, M a

a TEXAS TECH UNIVERSITY (United States)

b Texas Tech University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN QUANTUM WELLS; BAND EDGE; BAND GAP RENORMALIZATION; ELECTRON TRANSFER; EXCITATION INTENSITY; INTENSITY DEPENDENCE; PL BANDS; PL EMISSION; RADIATIVE PROCESS; STOKES SHIFT; TEMPERATURE DEPENDENCE; THERMAL ACTIVATION; THREE DIMENSIONAL MORPHOLOGY; THREE-DIMENSIONAL (3D); TIME-RESOLVED PHOTOLUMINESCENCE;

ABSORPTION; ABSORPTION SPECTROSCOPY; ELECTRON-PHONON INTERACTIONS; MORPHOLOGY; PHOTOLUMINESCENCE; TEMPERATURE DISTRIBUTION; THREE DIMENSIONAL; TWO DIMENSIONAL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 80054971409 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3645044 Document Type: Article

Times cited : (6)

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