Efficiency of light emission in high aluminum content AlGaN quantum wells

Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

  Shatalov, Max ^a   Yang, Jinwei ^a   Sun, Wenhong ^a   Kennedy, Robert ^a   Gaska, Remis ^a   Liu, Kai ^b   Shur, Michael ^b   Tamulaitis, Gintautas ^c  

^a SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYERS; ALGAN QUANTUM WELLS; CARRIER LIFETIME MEASUREMENTS; EXTERNAL QUANTUM EFFICIENCIES; HIGH ALUMINUM CONTENTS; HIGH QUALITIES; INTERNAL QUANTUM EFFICIENCIES; LIGHT-EXTRACTION EFFICIENCIES; LOWER BOUNDS; MULTIPLE QUANTUM WELLS; PHONON ENGINEERINGS; PHOTOLUMINESCENCE INTENSITIES; QUASI-STEADY STATE; TEMPERATURE DEPENDENCES; TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPIES; ULTRAVIOLET LIGHTS; UPPER LIMITS;

ALUMINA; CARRIER LIFETIME; CONTROL THEORY; EMISSION SPECTROSCOPY; EXTRACTION; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; OPTICAL PUMPING; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; WELLS;

QUANTUM EFFICIENCY;

EID: 65249102153     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3103321     Document Type: Article

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