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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 2, 2012, Pages

Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency

(11) Zhang, Wei a Nikiforov, A Yu a Thomidis, C a Woodward, J a Sun, H a Kao, Chen Kai a Bhattarai, D a Moldawer, A a Zhou, L b Smith, D J b Moustakas, T D a

a Boston University (United States)

b ARIZONA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM ALLOYS; EPITAXIAL GROWTH; GALLIUM; IONIZATION OF GASES; LIQUIDS; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SILICON CARBIDE;

4H-SIC SUBSTRATE; ALGAN; ALGAN QUANTUM WELLS; ALN; ALUMINUM ATOMS; DOUBLE HETEROSTRUCTURES; EFFUSION CELLS; GROWTH MODES; INTERNAL QUANTUM EFFICIENCY; LIQUID GALLIUM; LIQUID PHASE; LUMINESCENCE SPECTRUM; NITROGEN SPECIES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POTENTIAL FLUCTUATIONS; RED-SHIFTED; SIC SUBSTRATES; SINGLE PEAK;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84861596847 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3678208 Document Type: Article

Times cited : (28)

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