Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness

Applied Physics Letters

Volumn 100, Issue 26, 2012, Pages

  Huang, Huei Min ^a   Chang, Chiao Yun ^a   Lan, Yu Pin ^a   Lu, Tien Chang ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; ALGAN/GAN; BASAL STACKING FAULTS; CARRIER LOCALIZATION; LOCALIZED STATE; NON-POLAR; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; ULTRA-VIOLET LIGHT; ULTRAVIOLET EMISSION; WELL THICKNESS; WELL WIDTH;

DEFECTS; GALLIUM NITRIDE; ULTRAVIOLET RADIATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84863321757     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4730438     Document Type: Article

References (18)

1. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 1201 (2002). 10.1063/1.1498010
2. T. S. Ko, T. C. Wang, R. C. Gao, H. G. Chen, G. S. Huang, T. C. Lu, H. C. Kuo, and S. C. Wang, J. Cryst. Growth 300, 308 (2007). 10.1016/j.jcrysgro.2006. 12.046
3. S. C. Ling, C. L. Chao, J. R. Chen, P. C. Liu, T. S. Ko, T. C. Lu, H. C. Kuo, S. C. Wang, S. J. Cheng, and J. D. Tsay, J. Cryst. Growth 312, 1316 (2010). 10.1016/j.jcrysgro.2009.10.047
4. B. A. Haskell, F. Wu, M. D. Craven, s. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 83, 644 (2003). 10.1063/1.1593817
5. D. N. Zakharov, Z. Liliental-Weber, B. Wagner, Z. J. Reitmeier, E. A. Preble, and R. F. Davis, Phys. Rev. B 71, 235334 (2005). 10.1103/PhysRevB.71. 235334
6. C. Stampfl and C. G. Van de Walle, Phys. Rev. B 57, R15052 (1998). 10.1103/PhysRevB.57.R15052
7. G. Salviati, M. Albrecht, C. Zanotti-Fregonara, N. Armani, M. Mayer, Y. Shreter, M. Guzzi, Y. V. Melnik, K. Vassilevski, V. A. Dmitiev, and H. P. Strunk, Phys. Status Solidi A 171, 325 (1999). 10.1002/(SICI)1521-396X(199901) 171:1<325::AID-PSSA325>3.0.CO;2-1
8. R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Yang, and M. A. Khan, Appl. Phys. Lett. 86, 021908 (2005). 10.1063/1.1852085
9. X. Ni, U. Özgür, Y. Fu, N. Biyikli, J. Xie, A. A. Baski, H. Morko, and Z. Liliental-Weber, Appl. Phys. Lett. 89, 262105 (2006). 10.1063/1.2423328
10. P. Corfdir, P. Lefebvre, J. Levrat, A. Dussaigne, J. D. Ganière, D. Martin, J. Ristić, T. Zhu, N. Grandjean, and B. Deveaud- Plédran, J. Appl. Phys. 105, 043102 (2009). 10.1063/1.3075596
11. P. Corfdir, P. Lefebvre, J. Ristić, J. D. Ganière, and B. Deveaud-Plédran, Phys. Rev. B 80, 153309 (2009). 10.1103/PhysRevB.80. 153309
12. P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J. D. Ganière, N. Grandjean, and B. Deveaud-Plédran, J. Appl. Phys. 107, 043524 (2010). 10.1063/1.3305336
13. H. Jönen, U. Rossow, H. Bremers, L. Hoffmann, M. Brendel, A. D. Dräger, S. Schwaiger, F. Scholz, J. Thalmair, J. Zweck, and A. Hangleiter, Appl. Phys. Lett. 99, 011901 (2011). 10.1063/1.3607301
14. K. H. Baik, Y. G. Seo, S. K. Hong, S. Lee, J. Kim, J. S. Son, and S. M. Hwang, IEEE Photon. Technol. Lett. 22 (5), 595 (2010). 10.1109/LPT.2010.2042950
15. H. M. Huang, C. Y. Chang, T. C. Lu, and C. C. Yang, J. Electrochem. Soc. 158, H915 (2011). 10.1149/1.3610990
16. D. Bimberg, J. Christen, T. Fukunaga, H. Nakashima, D. E. Mars, and J. N. Miller, J. Vac. Sci. Technol. B 5, 1191 (1987). 10.1116/1.583710
17. T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, Appl. Phys. Lett. 93, 101901 (2008). 10.1063/1.2971205
18. J. H. Na, R. A. Taylor, K. H. Lee, T. Wang, A. Tahraoui, P. Parbrook, A. M. Fox, S. N. Yi, Y. S. Park, J. W. Choi, and J. S. Lee, Appl. Phys. Lett. 89, 253120 (2006). 10.1063/1.2423232