Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: Influence of Al composition and Si doping

Nanotechnology

Volumn 18, Issue 2, 2007, Pages

  Esmaeili, M ^a   Haratizadeh, H ^a,b   Monemar, B ^b   Paskov, P P ^b   Holtz, P O ^b   Bergman, P ^b   Iwaya, M ^c   Kamiyama, S ^c   Amano, H ^c   Akasaki, I ^c  

^a SHAHROOD UNIVERSITY OF TECHNOLOGY   (Iran)

^b LINKÖPING UNIVERSITY   (Sweden)

^c MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; EXCITONS; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; PHONONS; PHOTOLUMINESCENCE; SILICON;

HOLE LOCALIZATION; LOCALIZATION ENERGIES; PHONON COUPLINGS; RADIATIVE RECOMBINATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33846820440     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/2/025401     Document Type: Article

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