Fabrication of deep-ultraviolet-light-source tube using Si-doped AlGaN

Applied Physics Express

Volumn 4, Issue 4, 2011, Pages

  Shimahara, Yuki ^a   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a   Fukuyo, Fumitsugu ^b   Okada, Tomoyuki ^b   Takaoka, Hidetsugu ^b   Yoshida, Harumasa ^b  

^a MIE UNIVERSITY   (Japan)

^b CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION VOLTAGES; ALGAN; ALGAN FILMS; DEEP-UV; ELECTRON BEAM EXCITATION; EMISSION INTENSITY; GROWTH CONDITIONS; LOW-PRESSURE METALORGANIC VAPOR PHASE EPITAXY; MOVPE; SI-DOPING; ULTRA-VIOLET;

ELECTRON BEAMS; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; TUBES (COMPONENTS);

SILICON;

EID: 79954449848     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.042103     Document Type: Article

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