Synthesis and characterization of boron-doped Si quantum dots for all-Si quantum dot tandem solar cells

Solar Energy Materials and Solar Cells

Volumn 93, Issue 2, 2009, Pages 273-279

  Hao, X J ^a   Cho, E C ^a   Flynn, C ^a   Shen, Y S ^a   Park, S C ^b   Conibeer, G ^a   Green, M A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Boron; Dark resistivity; Doping; Silicon quantum dot; Solar cell

Indexed keywords

ACTIVATION ENERGY; BORON; CARRIER CONCENTRATION; DOPING (ADDITIVES); LIGHT EMISSION; LUMINESCENCE; MULTILAYER FILMS; NANOCRYSTALLINE ALLOYS; NONMETALS; OPTICAL MULTILAYERS; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; PHOTOELECTRON SPECTROSCOPY; PHOTOVOLTAIC CELLS; QUANTUM ELECTRONICS; SILICON; SILICON COMPOUNDS; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; SYNTHESIS (CHEMICAL); X RAY PHOTOELECTRON SPECTROSCOPY;

BORON CONCENTRATIONS; DARK RESISTIVITY; DOPED SI; DOPING; ELECTRICAL AND OPTICAL PROPERTIES; FERMI ENERGIES; FILM RESISTIVITIES; MULTIPLE LAYERS; NARROW SIZE DISTRIBUTIONS; QD SIZES; SI QUANTUM DOTS; SILICON QUANTUM DOT; SPUTTERING PROCESSES; SPUTTERING TECHNIQUES; SYNTHESIS AND CHARACTERIZATIONS; TANDEM SOLAR CELLS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 57649232797     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.10.017     Document Type: Article

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