Formation and photoluminescence of Si quantum dots in SiO 2/Si3N4 hybrid matrix for all-Si tandem solar cells

Solar Energy Materials and Solar Cells

Volumn 94, Issue 12, 2010, Pages 2238-2243

  Di, D ^a   Perez Wurfl, I ^a   Conibeer, G ^a   Green, M A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Nanocrystal growth; Photoluminescence; Silicon quantum dots; Tandem solar cells

Indexed keywords

ANNEALING METHODS; BAND GAPS; BARRIER LAYERS; BARRIER THICKNESS; CORE-SHELL MODEL; HYBRID MATRIX; NANOCRYSTAL GROWTH; PEAK ENERGY; PHOTOVOLTAIC APPLICATIONS; PL MEASUREMENTS; POST-DEPOSITION; QUARTZ SUBSTRATE; RADIATIVE RECOMBINATION PROCESS; RAMAN MEASUREMENTS; SI NANOCRYSTAL; SI QUANTUM DOT; SILICON QUANTUM DOTS; SILICON RICH OXIDES; SYNTHESIZED MATERIALS; TANDEM SOLAR CELLS; XRD;

NANOCRYSTALS; PHOTOLUMINESCENCE; QUARTZ; SEMICONDUCTOR QUANTUM DOTS; SILICON COMPOUNDS; SILICON OXIDES; SOLAR CELLS;

SILICON;

EID: 77957687063     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.07.018     Document Type: Article

References (22)

1. M.A. Green, et al., Progress with silicon-based tandem cells using silicon quantum dots in a dielectric matrix, in: Proceedings of the 22nd EU PVSEC, Milan, Italy, 2007, pp. 14.
2. M.A. Green, et al., Progress with all-silicon tandem cells based on silicon quantum dots in a dielectric matrix, in: Proceedings of the 21st EU PVSEC, Dresden, 2006, pp. 1014.
3. D. Di, I. Perez-Wurfl, A. Gentle, D-H. Kim, X. Hao, L. Shi, G. Conibeer, M.A. Green, Impacts of post-metallisation processes on the electrical and photovoltaic properties of Si quantum dot solar cells, Nanoscale Res. Lett., in press, doi:10.1007/s11671-010-9707-x.
4. 2 superlattice approach Appl. Phys. Lett. 80 2002 661 663
5. I. Perez-Wurfl, X. Hao, A. Gentle, D-H. Kim, G. Conibeer, and M.A. Green Si nanocrystal pin diodes fabricated on quartz substrates for third generation solar cell applications Appl. Phys. Lett. 95 2009 153506
6. S. Hasegawa, S. Watanabe, T. Inokuma, and Y. Kurata Structure and grain boundary defects of recrystallized silicon films prepared from amorphous silicon deposited using disilane J. Appl. Phys. 77 1995 1938 1947
7. X.J. Hao, E-C. Cho, C. Flynn, Y.S. Shen, S.C. Park, G. Conibeer, and M.A. Green Synthesis and characterization of boron-doped Si quantum dots for all-Si quantum dot tandem solar cells Sol. Energy Mater. Sol. Cells 93 2009 273 279
8. x/SiC multilayers targeting formation of Si nanocrystals in a SiC matrix J. Appl. Phys. 103 2008 083544
9. S. Huang, E-C. Cho, G. Conibeer, and M.A. Green Fabrication and characterization of tin-based nanocrystals J. Appl. Phys. 102 2007 114304
10. 4, and other phenacite-type compounds J. Appl. Phys. 53 1982 6817 6822
11. Y. Okada, and Y. Tokumaru Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K J. Appl. Phys. 56 1984 314 320
12. H. Tada, A.E. Kumpel, R.E. Lathrop, J.B. Slanina, P. Nieva, P. Zavracky, I.N. Miaoulis, and P.Y. Wong Thermal expansion coefficient of polycrystalline silicon and silicon dioxide thin films at high temperatures J. Appl. Phys. 87 2000 4189 4193
13. T.F. Retajczyk, and A.K. Sinha Elastic stiffness and thermal expansion coefficients of various refractory silicides and silicon nitride films Thin Solid Films 70 1980 241 247
14. J-H. Zhao, T. Ryan, P.S. Ho, A.J. McKerrow, and W-Y. Shih Measurement of elastic modulus, poisson ratio, and coefficient of thermal expansion of on-wafer submicron films J. Appl. Phys. 85 1999 6421 6424
15. G. Faraci, S. Gibilisco, P. Russo, and A.R. Pennisi Modified Raman confinement model for Si nanocrystals Phys. Rev. B 73 2006 033307
16. G. Conibeer, M. Green, E-C. Cho, D. Knig, Y-H. Cho, T. Fangsuwannarak, G. Scardera, E. Pink, Y. Huang, T. Puzzer, S. Huang, D. Song, C. Flynn, S. Park, X. Hao, and D. Mansfield Silicon quantum dot nanostructures for tandem photovoltaic cells Thin Solid Films 516 2008 6748 6756
17. T.V. Buuren, L.N. Dinh, L.L. Chase, W.J. Siekhaus, and L.J. Terminello Changes in the electronic properties of Si nanocrystals as a function of particle size Phys. Rev. Lett. 80 1998 3803 3806
18. F. Iacona, G. Franzo, and C. Spinella Correlation between luminescence and structural properties of Si nanocrystals J. Appl. Phys. 87 2000 1295 1303
19. H. Takagi, H. Ogawa, Y. Yamazaki, A. Ishizaki, and T. Nakagiri Quantum size effects on photoluminescence in ultrafine Si particles Appl. Phys. Lett. 56 1990 2379 2380
20. A. Hagfeldt, and M. Grandtzel Light-induced redox reactions in nanocrystalline systems Chem. Rev. 95 1995 49 68
21. Z. Zhou, L. Brus, and R. Friesner Electronic structure and luminescence of 1.1- and 1.4-nm silicon nanocrystals: oxide shell versus hydrogen passivation Nano Lett. 3 2003 163 167
22. S. Godefroo, M. Hayne, M. Jivanescu, A. Stesmans, M. Zacharias, O.I. Lebedev, G. Van Tendeloo, and V.V. Moshchalkov Classification and control of the origin of photoluminescence from Si nanocrystals Nat. Nanotechnol. 3 2008 174 178