Introducing dopants by diffusion to improve the conductivity of silicon quantum dot materials in 3rd generation photovoltaic devices

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 1, 2011, Pages 205-208

  Ma, Linzhi ^a   Lin, Dong ^a   Conibeer, Gavin ^a   Perez Wurfl, Ivan ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Conductivity; Diffusion; Doping; Quantum dot; Silicon

Indexed keywords

ALTERNATIVE METHODS; ANNEALING TIME; BI-LAYER STRUCTURE; CIRCULAR TRANSMISSION LINE; CONDUCTIVITY; DOPING; HIGH-TEMPERATURE ANNEALING; ORDER OF MAGNITUDE; P-TYPE SI; PHOSPHOROUS PENTOXIDE; PHOTOVOLTAIC DEVICES; QUANTUM DOT; QUANTUM DOT MATERIALS; QUARTZ SUBSTRATE; SHEET RESISTIVITY; SI CONCENTRATION; SILICON DIOXIDE; SILICON RICH OXIDES;

BORON; DIFFUSION; DOPING (ADDITIVES); EXTRACTION; MATERIALS; PHOSPHORUS; PHOTOVOLTAIC EFFECTS; QUARTZ; SEMICONDUCTOR QUANTUM DOTS; SILICA; SILICON COMPOUNDS; SILICON OXIDES;

SILICON;

EID: 78751481997     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000677     Document Type: Article

References (7)

1. M. A. Green, Third Generation Photovoltaics (Springer-Verlag, Berlin, 2006), p. 60.
2. G. Conibeer, M. Green, Eun-Chel Cho, D. König, Young-Hyun Cho, T. Fangsuwannarak, G. Scardera, E. Pink, Yidan Huang, T. Puzzer, Shujuan Huang, Dengyuan Song, C. Flynn, Sangwook Park, Xiaojing Hao, and D. Mansfield, Thin Solid Films 516, 6748 (2008).
3. X. J. Hao, A. P. Podhorodecki, Y. S. Shen, G. Zatryb, J. Misiewicz, and M. A. Green, Nanotechnology 20, 485703 (2009).
4. Eun-Chel Cho, Sangwook Park, Xiaojing Hao, Dengyuan Song, G. Conibeer, Sang-Cheol Park, and M. A. Green, Nanotechnology 19, 245201 (2008).
5. G. K. Reeves, Solid-State Electron. 23, 487 (1980).
6. I. Perez-Wurfl, X. J. Hao, A. Gentle, Dong-Ho Kim, G. Conibeer, and M. A. Green, Appl. Phys. Lett. 95, 153506 (2009).
7. D. McCaughan, R. Kushner, and S. Wagner, J. Electrochem. Soc. 121, 724 (1974).