Silicon nanocrystals in an oxide matrix for thin film solar cells with 492 mV open circuit voltage

Solar Energy Materials and Solar Cells

Volumn 100, Issue , 2012, Pages 65-68

  Perez Wurfl, I ^a   Ma, L ^a   Lin, D ^a   Hao, X ^a   Green, M A ^a   Conibeer, G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

CV; Doping type determination; MOS; Silicon quantum dot solar cells

Indexed keywords

ALTERNATING LAYERS; C-V MEASUREMENT; CIRCUIT MODELS; CV; DIODE STRUCTURE; IN-SITU; IV CHARACTERISTICS; MOS; MOS STRUCTURE; OXIDE MATRIX; P TYPE SEMICONDUCTOR; P-TYPE; QUARTZ SUBSTRATE; RECTIFYING BEHAVIORS; SI NANOCRYSTAL; SILICON NANOCRYSTALS; SILICON RICH OXIDES; THIN FILM LAYERS; THIN FILM SOLAR CELLS;

BORON; FABRICATION; OPEN CIRCUIT VOLTAGE; OPTICAL WAVEGUIDES; PHOSPHORUS; QUARTZ; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; THIN FILMS;

SILICON OXIDES;

EID: 84857791791     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.02.029     Document Type: Article

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